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128Mb: x16 Mobile SDRAM
Operation
Figure 21:
WRITE-to-PRECHARGE
T0
T1
T2
T3
T4
T5
T 6
C LK
t WR @ t C K 15ns
DQM
t RP
C OMMAND
WRITE
NOP
PRE C HAR G E
NOP
NOP
A C TIVE
NOP
ADDRE SS
BANK a ,
C OL n
BANK
( a or all)
BANK a ,
ROW
t WR
DQ
D IN
n
D IN
n +1
t WR @ t C K < 15ns
DQM
t RP
C OMMAND
WRITE
NOP
NOP
PRE C HAR G E
NOP
NOP
A C TIVE
ADDRE SS
BANK a ,
C OL n
BANK
( a or all)
BANK a ,
ROW
t WR
DQ
D IN
n
D IN
n +1
DON ’ T C ARE
Notes:
1. DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
Figure 22:
Terminating a WRITE Burst
CLK
T0
T1
T2
COMMAND
ADDRESS
DQ
WRITE
BANK,
COL n
D IN
n
BURST
TERMINATE
NEXT
COMMAND
(ADDRESS)
(DATA)
TRANSITIONING DATA
DON’T CARE
Notes:
1. DQMs are LOW.
PRECHARGE
The PRECHARGE command (see Figure 23 on page 28) is used to deactivate the open
row in a particular bank or the open row in all banks. The bank(s) will be available for a
subsequent row access some specified time ( t RP) after the PRECHARGE command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the
case where only one bank is to be precharged, inputs BA0, BA1 select the bank. When all
banks are to be precharged, inputs BA0, BA1 are treated as “Don’t Care.” Once a bank
has been precharged, it is in the idle state and must be activated prior to any READ or
WRITE commands being issued to that bank.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
27
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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